Project Description

YESvGaN will create a new class of Wide Band Gap (WBG) providing the performance at high power levels of SiC at the cost of silicon.

The new technology of vertical GaN aims to replace Si-IGBT and thus reduce power conversion losses in different price-sensitive applications from industrial to automotive.

YESvGaN project covers the development of the required new technology all the way from wafer via equipment to application.

The project’s consortium consists of 23 European partners located in seven countries: Austria, Belgium, France, Germany, Italy, Spain and Sweden.

The partners goes to academia over SMEs to large industrial companies.

The project has received funding form ECSEL Joint Undertaking (JU) under the grant agreement No. 101007229. The JU is supported from European Union’s H2020 and National budgets.

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