YESvGaN will create a new class of Wide Band Gap (WBG) power transistor having SiC performance at high power levels and at Silicon cost.
The new vertical GaN technology aims to replace Si-IGBT transistors and thus reduce power conversion losses in different price-sensitive applications ranging from manufacturing to automotive.
YESvGaN covers the development of the required new technology all the way from wafer to application.
Project’s consortium consists of 23 European partners from seven countries: Austria, Belgium, France, Germany, Italy, Spain and Sweden.
Consortium partners belong to different backgrounds: academia, SME and important industrial partners.
This project has received funding from the ECSEL Joint Undertaking (JU) under grant agreement No 101007229. The JU receives support from the European Union’s Horizon 2020 research and innovation programme and National funds.